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Silicon Crystal Growth Furnace 1200

  • Description
Product Detail

    Silicon crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, using czochralski technique dislocation-free crystal growth equipment, it can produce high quality single crystal. Here are the parameters of silicon crystal growth furnace 1200.


    Heat field

    26 inch?28 inch

    single crystal size

    8 inch - 12 inch


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Anhui Yixin Semiconductor Co.,Ltd

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