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Ultra-high Doped Monocrystalline Silicon Ingot

  • Description
Product Detail

    We have ultra-high arsenic doping monocrystalline silicon ingot. Once the ingot is fully-grown, it is ground to a rough size diameter a little larger than the desired diameter of the finished silicon wafer. The ingot is then given a notch or flat to indicate its orientation, depending on the wafer diameter, customer specifications, or SEMI Standards. Once it has passed a number of inspections, the ingot is sliced into wafers.


    Type

    Dopant

    Diameter
    (mm)

    Resistivity Range
      (ohm.cm)

    N

    Arsenic

    100/125/150/200/300/400

    0.0020~0.01

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Anhui Yixin Semiconductor Co.,Ltd

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